Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells
Identifieur interne : 000329 ( Chine/Analysis ); précédent : 000328; suivant : 000330Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells
Auteurs : RBID : Pascal:13-0345488Descripteurs français
- Pascal (Inist)
- Fonctionnalisation, Modification chimique, Couche interfaciale, Cellule solaire organique, Chimisorption, Résistance série, Angle contact, Hydrophobicité, Mouillage, Etude comparative, Effet photoinduit, Transfert charge, Collection charge, Addition étain, Traitement surface, Propriété surface, Courant court circuit, Facteur remplissage, Couche active, Conversion énergie, Taux conversion, Fullerènes, Acide butyrique, Oxyde de titane, Couche autoassemblée, Oxyde d'indium, Ester, Composé du fullerène, Matériau dopé, 8105T, 8116D, ITO.
English descriptors
- KwdEn :
- Active layer, Butyric acid, Charge collection, Charge transfer, Chemical modification, Chemisorption, Comparative study, Contact angle, Conversion rate, Doped materials, Energy conversion, Ester, Fill factor, Fullerene compounds, Fullerenes, Functionalization, Hydrophobicity, Indium oxide, Interfacial layer, Organic solar cells, Photoinduced effect, Self-assembled layer, Series resistance, Short circuit currents, Surface properties, Surface treatment, Tin addition, Titanium oxide, Wetting.
Abstract
Two types of carboxylic acid functionalized fullerence derivatives, 4-(2-ethylhexyloxy)-[6,6]-phenyl C61-butyric acid (p-EHO-PCBA) and bis-4-(2-ethylhexyloxy)-[6,6]-phenyl C61-butyric acid (bis-p-EHO-PCBA), were synthesized and investigated as an interfacial layer for inverted polymer solar cells (iPSCs). The -COOH groups on the PCBAs chemisorb to inorganic metal oxide (TiOx), generating fullerene-based self-assembled monolayers (FSAMs). The devices with the mono- and bis-FSAMs exhibited substantially lower series resistance (Rs) values of 2.10 Ω cm2 and 1.46 cm2, compared to that (4.15 Ω cm2) of the unmodified device. The TiOx films modified with mono- and bis-FSAMs showed higher contact angles of 50° and 91°, respectively, than that of the pristine TiOx film (33°). The increased contact angles were attributed to the enhanced hydrophobicity, improving the wetting properties with the organic photoactive layer. In addition, a comparison of device characteristics with electroactive FSAMs and non-electroactive benzoic acid SAMs clearly indicates that the FSAMs may suggest an additional pathway for photo-induced charge transfer and charge collection to ITO. After surface modification with FSAMs, the short-circuit current density (JSC) and fill factor (FF) values increased substantially. The iPSCs based on poly(5,6-bis(octyloxy)-4-(thiophen-2-1)benzo[c][1,2,5]thiadiazole) (PTBT) and [6,6]phenyl-C61-butyric acid methyl ester (PCBM) as an active layer showed remarkably improved power conversion efficiency up to 5.13% through incorporation of the FSAMs-based interfacial layer.
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Pascal:13-0345488Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells</title><author><name>HYOSUNG CHOI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Banyeon-ri 100, Ulsan 689-798</wicri:noRegion></affiliation></author><author><name>JUNGHOON LEE</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Banyeon-ri 100, Ulsan 689-798</wicri:noRegion></affiliation></author><author><name>WONHO LEE</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Cogno-Mechatronics Engineering (WCU), Pusan National University</s1><s2>Miryang 627-706</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Miryang 627-706</wicri:noRegion></affiliation></author><author><name sortKey="Ko, Seo Jin" uniqKey="Ko S">Seo-Jin Ko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Banyeon-ri 100, Ulsan 689-798</wicri:noRegion></affiliation></author><author><name>RENQIANG YANG</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences Qingdao</s1><s2>Shandong Province 266101</s2><s3>CHN</s3><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shandong Province 266101</wicri:noRegion></affiliation></author><author><name>JEONG CHUL LEE</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research</s1><s2>Ulsan 689-798</s2><s3>KOR</s3><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Ulsan 689-798</wicri:noRegion></affiliation></author><author><name>HAN YOUNG WOO</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Cogno-Mechatronics Engineering (WCU), Pusan National University</s1><s2>Miryang 627-706</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Miryang 627-706</wicri:noRegion></affiliation></author><author><name>CHANGDUK YANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Banyeon-ri 100, Ulsan 689-798</wicri:noRegion></affiliation></author><author><name>JIN YOUNG KIM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Banyeon-ri 100, Ulsan 689-798</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0345488</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0345488 INIST</idno><idno type="RBID">Pascal:13-0345488</idno><idno type="wicri:Area/Main/Corpus">000562</idno><idno type="wicri:Area/Main/Repository">001177</idno><idno type="wicri:Area/Chine/Extraction">000329</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Butyric acid</term><term>Charge collection</term><term>Charge transfer</term><term>Chemical modification</term><term>Chemisorption</term><term>Comparative study</term><term>Contact angle</term><term>Conversion rate</term><term>Doped materials</term><term>Energy conversion</term><term>Ester</term><term>Fill factor</term><term>Fullerene compounds</term><term>Fullerenes</term><term>Functionalization</term><term>Hydrophobicity</term><term>Indium oxide</term><term>Interfacial layer</term><term>Organic solar cells</term><term>Photoinduced effect</term><term>Self-assembled layer</term><term>Series resistance</term><term>Short circuit currents</term><term>Surface properties</term><term>Surface treatment</term><term>Tin addition</term><term>Titanium oxide</term><term>Wetting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fonctionnalisation</term><term>Modification chimique</term><term>Couche interfaciale</term><term>Cellule solaire organique</term><term>Chimisorption</term><term>Résistance série</term><term>Angle contact</term><term>Hydrophobicité</term><term>Mouillage</term><term>Etude comparative</term><term>Effet photoinduit</term><term>Transfert charge</term><term>Collection charge</term><term>Addition étain</term><term>Traitement surface</term><term>Propriété surface</term><term>Courant court circuit</term><term>Facteur remplissage</term><term>Couche active</term><term>Conversion énergie</term><term>Taux conversion</term><term>Fullerènes</term><term>Acide butyrique</term><term>Oxyde de titane</term><term>Couche autoassemblée</term><term>Oxyde d'indium</term><term>Ester</term><term>Composé du fullerène</term><term>Matériau dopé</term><term>8105T</term><term>8116D</term><term>ITO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Two types of carboxylic acid functionalized fullerence derivatives, 4-(2-ethylhexyloxy)-[6,6]-phenyl C<sub>61</sub>-butyric acid (p-EHO-PCBA) and bis-4-(2-ethylhexyloxy)-[6,6]-phenyl C<sub>61</sub>-butyric acid (bis-p-EHO-PCBA), were synthesized and investigated as an interfacial layer for inverted polymer solar cells (iPSCs). The -COOH groups on the PCBAs chemisorb to inorganic metal oxide (TiO<sub>x</sub>), generating fullerene-based self-assembled monolayers (FSAMs). The devices with the mono- and bis-FSAMs exhibited substantially lower series resistance (R<sub>s</sub>) values of 2.10 Ω cm<sup>2</sup> and 1.46 cm<sup>2</sup>, compared to that (4.15 Ω cm<sup>2</sup>) of the unmodified device. The TiO<sub>x</sub> films modified with mono- and bis-FSAMs showed higher contact angles of 50° and 91°, respectively, than that of the pristine TiO<sub>x</sub> film (33°). The increased contact angles were attributed to the enhanced hydrophobicity, improving the wetting properties with the organic photoactive layer. In addition, a comparison of device characteristics with electroactive FSAMs and non-electroactive benzoic acid SAMs clearly indicates that the FSAMs may suggest an additional pathway for photo-induced charge transfer and charge collection to ITO. After surface modification with FSAMs, the short-circuit current density (J<sub>SC</sub>) and fill factor (FF) values increased substantially. The iPSCs based on poly(5,6-bis(octyloxy)-4-(thiophen-2-1)benzo[c][1,2,5]thiadiazole) (PTBT) and [6,6]phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM) as an active layer showed remarkably improved power conversion efficiency up to 5.13% through incorporation of the FSAMs-based interfacial layer.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>HYOSUNG CHOI</s1></fA11><fA11 i1="02" i2="1"><s1>JUNGHOON LEE</s1></fA11><fA11 i1="03" i2="1"><s1>WONHO LEE</s1></fA11><fA11 i1="04" i2="1"><s1>KO (Seo-Jin)</s1></fA11><fA11 i1="05" i2="1"><s1>RENQIANG YANG</s1></fA11><fA11 i1="06" i2="1"><s1>JEONG CHUL LEE</s1></fA11><fA11 i1="07" i2="1"><s1>HAN YOUNG WOO</s1></fA11><fA11 i1="08" i2="1"><s1>CHANGDUK YANG</s1></fA11><fA11 i1="09" i2="1"><s1>JIN YOUNG KIM</s1></fA11><fA14 i1="01"><s1>Interdisciplinary School of Green Energy and KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST)</s1><s2>Banyeon-ri 100, Ulsan 689-798</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Cogno-Mechatronics Engineering (WCU), Pusan National University</s1><s2>Miryang 627-706</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences Qingdao</s1><s2>Shandong Province 266101</s2><s3>CHN</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research</s1><s2>Ulsan 689-798</s2><s3>KOR</s3><sZ>6 aut.</sZ></fA14><fA20><s1>3138-3145</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000501043310580</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0345488</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Two types of carboxylic acid functionalized fullerence derivatives, 4-(2-ethylhexyloxy)-[6,6]-phenyl C<sub>61</sub>-butyric acid (p-EHO-PCBA) and bis-4-(2-ethylhexyloxy)-[6,6]-phenyl C<sub>61</sub>-butyric acid (bis-p-EHO-PCBA), were synthesized and investigated as an interfacial layer for inverted polymer solar cells (iPSCs). The -COOH groups on the PCBAs chemisorb to inorganic metal oxide (TiO<sub>x</sub>), generating fullerene-based self-assembled monolayers (FSAMs). The devices with the mono- and bis-FSAMs exhibited substantially lower series resistance (R<sub>s</sub>) values of 2.10 Ω cm<sup>2</sup> and 1.46 cm<sup>2</sup>, compared to that (4.15 Ω cm<sup>2</sup>) of the unmodified device. The TiO<sub>x</sub> films modified with mono- and bis-FSAMs showed higher contact angles of 50° and 91°, respectively, than that of the pristine TiO<sub>x</sub> film (33°). The increased contact angles were attributed to the enhanced hydrophobicity, improving the wetting properties with the organic photoactive layer. In addition, a comparison of device characteristics with electroactive FSAMs and non-electroactive benzoic acid SAMs clearly indicates that the FSAMs may suggest an additional pathway for photo-induced charge transfer and charge collection to ITO. After surface modification with FSAMs, the short-circuit current density (J<sub>SC</sub>) and fill factor (FF) values increased substantially. The iPSCs based on poly(5,6-bis(octyloxy)-4-(thiophen-2-1)benzo[c][1,2,5]thiadiazole) (PTBT) and [6,6]phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM) as an active layer showed remarkably improved power conversion efficiency up to 5.13% through incorporation of the FSAMs-based interfacial layer.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H45G</s0></fC02><fC02 i1="03" i2="X"><s0>001D11C06</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC02 i1="06" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Fonctionnalisation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Functionalization</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Funciónalización</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Modification chimique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Chemical modification</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Modificación química</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Couche interfaciale</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Interfacial layer</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Capa interfacial</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Chimisorption</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Chemisorption</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Chemisorption</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Adsorción química</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Résistance série</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Series resistance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Resistencia en serie</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Angle contact</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Contact angle</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="GER"><s0>Kontaktwinkel</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Angulo contacto</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Hydrophobicité</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Hydrophobicity</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Hidrofobicidad</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Mouillage</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Wetting</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Remojo</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Etude comparative</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Comparative study</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="GER"><s0>Vergleich</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Effet photoinduit</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Photoinduced effect</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Efecto fotoinducido</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Transfert charge</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Charge transfer</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Transferencia carga</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Collection charge</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Charge collection</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Addition étain</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Tin addition</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="GER"><s0>Zinnzusatz</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Adición estaño</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Traitement surface</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Surface treatment</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="GER"><s0>Oberflaechenbehandlung</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Tratamiento superficie</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Propriété surface</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Surface properties</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="GER"><s0>Oberflaecheneigenschaft</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Propiedad superficie</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Facteur remplissage</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Fill factor</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Couche active</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Active layer</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Capa activa</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Conversion énergie</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Energy conversion</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Conversión energética</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Taux conversion</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Conversion rate</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Factor conversión</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Fullerènes</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Fullerenes</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="GER"><s0>Titanoxid</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Couche autoassemblée</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Self-assembled layer</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Capa autoensamblada</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Indium oxide</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="GER"><s0>Indiumoxid</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Indio óxido</s0><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="GER"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>28</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8116D</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>329</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
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|texte= Acid-functionalized fullerenes used as interfacial layer materials in inverted polymer solar cells
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